1.Material:Silicon carbide is composed of tetrahedra of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material. Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800°C. In air, SiC forms a protective silicon oxide coating at 1200°C and is able to be used up to 1600°C. The high thermal conductivity coupled with low thermal expansion and high strength give this material exceptional thermal shock resistant qualities. Silicon carbide ceramics with little or no grain boundary impurities maintain their strength to very high temperatures, approaching 1600°C with no strength loss. Chemical purity, resistance to chemical attack at temperature, and strength retention at high temperatures has made this material very popular as wafer tray supports and paddles in semiconductor furnaces. The electrical conduction of the material has lead to its use in resistance heating elements for electric furnaces, and as a key component in thermistors (temperature variable resistors) and in varistors (voltage variable resistors).

2.Density：3.15g/cm3

3.Color: black

4.Grade：G10，G16

Key Properties

1, Low density
2, High strength
3, Low thermal expansion
4, High thermal conductivity
5, High hardness
6, High elastic modulus
7, Excellent thermal shock resistance
8, Superior chemical inertness

Typical Uses

1, Fixed and moving turbine components
2, Suction box covers
3, Seals,bearings
4, Ball valve parts
5, Hot gas flow liners
6, Heat exchangers
7, Semiconductor process equipment